GD LKKC-20120

Ka-Band Low Noise Amplifier

Features

LKKC-20120 Ka-Band Ultra Low Noise Amplifier is specially designed for satellite earth station and other telecommunications applications. Utilizing state-of-the-art HEMT and GaAs MMIC technology, this amplifier has been designed for both fixed and transportable applications. The noise temperature specification is guaranteed over the full bandwidth of the LNA, and measured using a cryogenic hot/cold load test setup.

Wideband coverage, 17.7-21.2 GHz

Gain Level, 50 dB

Low noise temperature, 120 K

High Output power, P1 dB = +20 dBm

Temperature compensated gain

High reliability HEMT design

Input/output isolators

Reverse polarity protection

Wide operating temperature range, -40 °C to +70 °C

Form ‘A’ alarm (deviation from nominal current)

Weatherized design for outdoor applications

Factory Reference: Ka-Band Low Noise Amplifier